Atomic-level investigation of the growth of Si/Ge by ultrahigh vacuum chemical vapor deposition
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منابع مشابه
The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(1 0 0) by ultrahigh vacuum chemical vapor deposition
High-quality Ge epilayer on Si(1 0 0) substrate with an inserted low-temperature Ge seed layer and a thin Si0.77Ge0.23 layer was grown by ultrahigh vacuum chemical vapor deposition. The epitaxial Ge layer with surface root-mean-square roughness of 0.7 nm and threading dislocation density of 5 10 cm 2 was obtained. The influence of low temperature Ge seed layer on the quality of Ge epilayer was ...
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